technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-08 03 website: http: //www.microsemi.com radiation hardened npn silicon switching transistor qualified per mil-prf-19500/255 t4-lds-0042 rev. 2 (080857) page 1 of 3 devices levels 2n2221a 2n2222a jansm ? 3k rads (si) 2n2221al 2n2222al jansd ? 10k rads (si) 2n2221aua 2n2222aua jansp ? 30k rads (si) 2n2221aub 2n2222aub jansl ? 50k rads (si) 2n2221aubc 2n2222aubc jansr ? 100k rads (si) jansf ? 300k rads (si) jansg ? 500k rads (si) jansh ? 1meg rads (si) absolute maximum ratings (t c = +25c unless otherwise noted) to-18 (to-206aa) 2n2221a, 2n2222a 4 pin 2n2221aua, 2n2222aua 3 pin 2n2221aub, 2n2222aub 2n2221aubc, 2n2222aubc (ubc = ceramic lid version) parameters / test conditions symbol value unit collector-emitter voltage v ceo 50 vdc collector-base voltage v cbo 75 vdc emitter-base voltage v ebo 6.0 vdc collector current i c 800 madc total power dissipation @ t a = +25c p t w 2n2221a, l 2n2221aua 2n2221aub, ubc 2n2222a, l 2n2222aua 2n2222aub, ubc 0.5 0.65 0.50 operating & storage junction temperature range t op , t stg -65 to +200 c thermal characteristics parameters / test conditions symbol max. unit thermal resistance, junction-to-ambient r ja c/w 2n2221a, l 2n2221aua 2n2221aub, ubc 2n2222a, l 2n2222aua 2n2222aub, ubc 325 210 325 1. derate linearly 3.08 mw/c above t a > +37.5c 2. derate linearly 4.76 mw/c above t a > +63.5c
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-08 03 website: http: //www.microsemi.com radiation hardened npn silicon switching transistor qualified per mil-prf-19500/255 t4-lds-0042 rev. 2 (080857) page 2 of 3 electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off characteristics collector-emitter breakdown voltage v (br)ceo 50 vdc i c = 10madc collector-base cutoff current i cbo adc adc v cb = 75vdc v cb = 60vdc 10 10 emitter-base cutoff current i ebo adc adc v eb = 6.0vdc v eb = 4.0vdc 10 10 collector-emitter cutoff current i ces 50 adc v ce = 50vdc on characteristics (3) forward-current transfer ratio h fe i c = 0.1madc, v ce = 10vdc 2n2221a, l, ua, ub, ubc 2n2222a, l, ua, ub, ubc 30 50 i c = 1.0madc, v ce = 10vdc 2n2221a, l, ua, ub, ubc 2n2222a, l, ua, ub, ubc 35 75 150 325 i c = 10madc, v ce = 10vdc 2n2221a, l, ua, ub, ubc 2n2222a, l, ua, ub, ubc 40 100 i c = 150madc, v ce = 10vdc 2n2221a, l, ua, ub, ubc 2n2222a, l, ua, ub, ubc 40 100 120 300 i c = 500madc, v ce = 10vdc 2n2221a, l, ua, ub, ubc 2n2222a, l, ua, ub, ubc 20 30 collector-emitter saturation voltage v ce(sat) vdc i c = 150madc, i b = 15madc i c = 500madc, i b = 50madc 0.3 1.0 base-emitter voltage v be(sat) vdc i c = 150madc, i b = 15madc i c = 500madc, i b = 50madc 0.6 1.2 2.0
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-08 03 website: http: //www.microsemi.com radiation hardened npn silicon switching transistor qualified per mil-prf-19500/255 t4-lds-0042 rev. 2 (080857) page 3 of 3 dynamic characteristics parameters / test conditions symbol min. max. unit small-signal short-circuit forward current transfer ratio h fe i c = 1.0madc, v ce = 10vdc, f = 1.0khz 2n2221a, l, ua, ub, ubc 2n2222a, l, ua, ub, ubc 30 50 magnitude of small?signal short-circuit forward current transfer ratio |h fe | i c = 20madc, v ce = 20vdc, f = 100mhz 2.5 output capacitance c obo 8.0 pf v cb = 10vdc, i e = 0, 100khz f 1.0mhz input capacitance c ibo 25 pf v eb = 0.5vdc, i c = 0, 100khz f 1.0mhz switching characteristics parameters / test conditions symbol min. max. unit turn-on time see figure 8 of mil-prf-19500/255 t on 35 s turn-off time see figure 9 of mil-prf-19500/255 t off 300 s (3) pulse test: pulse width = 300 s, duty cycle 2.0%.
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